低压MOS管DO3400B可替代AO3400 SOT-23 N管 30V5.8A 26mΩ
2023-03-10 12:03:17
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低压MOS管DO3400B可替代AO3400 SOT-23 N管 30V5.8A 26mΩ
型号：DO3400B
N管
(相关资料图)
电压电流：30V5.8A
内阻：26mΩ
封装：SOT-23
Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
